Ultrafast processes of highly excited carriers in CdSxSe1-x-doped glass

Citation
Xj. Zhang et M. Izutsu, Ultrafast processes of highly excited carriers in CdSxSe1-x-doped glass, JPN J A P 1, 37(11), 1998, pp. 6025-6028
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
37
Issue
11
Year of publication
1998
Pages
6025 - 6028
Database
ISI
SICI code
Abstract
Femtosecond pump-probe experiments were conducted, and transient absorption spectra showing ultrafast dynamic processes of highly excited carriers wer e observed in a glass doped with microcrystalline CdSxSe1-x (average partic le diameter of 2 nm). A relaxation process with a time constant of about 2 ps was obtained. This was the first observation of a 2-ps dynamic process o ccurring over a very wide spectral range, and the process can be understood as the relaxation of the excited carriers in the dangling-bond surface sta tes. A residual increment in absorption was evident after the relaxation.