Microscopy of SiC layers grown by C-60 deposition on Si (100)

Silicon carbide layers grown by C-60 deposition on silicon (100) substrates at temperatures between 700 degrees C and 870 degrees C were investigated by optical microscopy (OM) as well as by scanning and transmission electron microscopy (SEM and TEM). The formation of extended cavities in the substr ate surfaces, below the growing SiC layers, was observed. These cavities st art to develop at the very beginning of SIC nucleation. The SiC layers brid ging the cavities consist of columnar grains and contain open channels in b etween the grains. The epitaxial-oriented cubic fractions in the SiC layers increase with the elevation of the substrate temperature applied during C- 60 deposition.