Y2O3-stabilized ZrO2 thin films prepared by metalorganic chemical vapor deposition

Zirconia films stabilized by Y2O3 were deposited by metal-organic chemical vapor techniques onto various crystalline substrates. Y2O3, ZrO2 and mixtur es of these two were deposited and characterized. The deposition rate, the film composition and the structure could be systematically varied through t he Y(C11H19O2)(3), Zr(O . t-C4H9)(4) and O-2 source gas ratios;and the subs trate temperature. The Y/Zr ratio could be adjusted by controlling the rati o in Y(C11H19O2)(3) to Zr(O . t-C4H9)(4) partial pressures. However, the Y/ Zr ratio was found to be smaller than that estimated based on the depositio n rates of unmixed Y2O3 and ZrO2 films. The activation energy of the Y2O3 c omponent in YSZ film growth was similar to that of the ZrO2 component in YS Z films. These YSZ values were more than 4 times larger than those of unmix ed Y2O3 or ZrO2 films.