Lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser

Lasing action in an In0.1Ga0.9N vertical cavity surface emitting laser was successfully achieved, for the first time, at a wavelength of 381 nm. The 3 lambda vertical cavity comprising an In0.1Ga0.9N active region was grown o n a GaN/Al0.34Ga0.66N quarter-wave reflector by metal organic chemical vapo r deposition (MOCVD), and covered with a TiO2/SiO2 reflector by electron-be am evaporation. The laser was operated at 77 K under optical excitation, We have observed a significant narrowing of the emission spectrum from 2.5 nm below the threshold to 0.1 nm (resolution limit) above the threshold, whic h is a clear signature of lasing action.