The predominant role of hydrogen atoms and CH3 radicals in diamond growth m
echanism in moderate pressure reactors is now generally accepted. Measuring
the densities of these species at the growing diamond surface, as a functi
on of the deposition parameters is essential for predicting growth rate, fi
lm morphology and quality. Since experimental measurements of CH3 radicals
are difficult, we have chosen to develop model able to run in H-2 + CH4 pla
sma. This model predicts plasma and surface composition as well as growth r
ate. It is partially validate with experimental measurements of H-atoms and
growth rates.