A curvilinear finite volume-based numerical methodology has been developed
that can be effectively used for simulation of the Bridgman and Czochralski
(Cz) crystal growth processes. New features of grid generation have been d
evised and added to the original formulation (Zhang et at, 1995, 1996) to m
ake it suitable for global modeling. The numerical model can account for co
nvection in both the melt and the gas phases, convection/radiation in the f
urnace, and conduction in all solid components. Results for Bridgman growth
show that the pow pattern and interface shape strongly depend on thermal c
onductivities of the crystal, melt, and ampoule materials. Transient simula
tions have been performed for the growth of Bismuth crystal in a Bridgman-S
tockbarger system and the growth of GaAs crystal using liquid-encapsulated
Czochralski (LEC) technique. This is the first time that a global high-pres
sure LEC model is able to account for convective flows and heat transfer an
d predict the interface shape and its dynamics.