Photoluminescence study of interface microroughness and exciton transfer in growth-interrupted single quantum wells

Authors
Citation
Mk. Chin et Cp. Luo, Photoluminescence study of interface microroughness and exciton transfer in growth-interrupted single quantum wells, J LUMINESC, 79(4), 1998, pp. 233-240
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
79
Issue
4
Year of publication
1998
Pages
233 - 240
Database
ISI
SICI code
0022-2313(199811)79:4<233:PSOIMA>2.0.ZU;2-N
Abstract
Photoluminescence (PL) spectroscopy is used to study the interface disorder and interface exciton transfer in single quantum wells of various well wid ths grown by MBE with different growth interruption times. Growth-interrupt ion-induced microroughness on the interface terraces gives rise to peak spl itting in the PL spectra with energy spacings that correspond to less than 1 ML width difference. We were able to use the well width dependence of the number of split peaks and the ratios of integrated PL intensity as an opti cal probe to determine the terrace areas and deduce the probability distrib ution of the interface roughness. Furthermore, a detailed study of the chan ge in relative intensities of the various peaks in PL spectra taken at vary ing temperature reveals intra-well transfer of excitions among the localiza tion regions and inter-well transfer. The intra-well transfer corresponds, in terms of energy, to either relaxation (by emission of an LO phonon) or t hermal population (via phonon absorption), (C) 1998 Elsevier Science B.V. A ll rights reserved.