Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters

Authors
Liu, JP Kong, MY Si, JJ Huang, DD Li, JP Sun, DZ
Citation
Jp. Liu et al., Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters, J PHYS D, 31(23), 1998, pp. L85-L87
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
31
Issue
23
Year of publication
1998
Pages
L85 - L87
Database
ISI
SICI code
0022-3727(199812)31:23<L85:PPOSSW>2.0.ZU;2-5
Abstract
Photoluminescence properties of SiGe/Si single wells with fluctuating struc tural parameters are studied. Four SiGe/Si single wells have been grown on Si(001) at 750 degrees C by disilane and solid Ge molecular beam epitaxy wi th varied disilane cracking-temperatures. Intense NP and TO-phonon replicas are detected up to 70 K in the photoluminescence spectra and the activatio n energy of the thermal quenching of the photoluminescence is 28 +/- 4 meV. The high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property.