Highly reactive and nanometer-sized (30-50 nm) Sn-doped BaTi4O9 (BaTi(4-)xS
n(x)O(9); x = 0.0-0.03) powders have been prepared by the citrate-precursor
method. The effect of Sn substitution on the crystallization and microwave
dielectric properties has also been investigated on the basis of microstru
cture and crystal structure. Addition of a small amount of SnO2 resulted in
a lowering of the sintering temperature of BaTi4O9, and at 1250-1300 degre
es C for 2-5 h, dense compounds with a theoretical density up to 99% could
be obtained. The Sn-doped BaTi4O9 materials were found to have excellent mi
crowave dielectric properties with epsilon(r) = 34-37, Q = 8300-8900 at 11
GHz and tau(f) = 3.6-16.1 ppm/degrees C.