Ferroelectric thin films of bismuth-containing layered perovskites: Part I, Bi4Ti3O12

Authors
Citation
Xf. Du et Iw. Chen, Ferroelectric thin films of bismuth-containing layered perovskites: Part I, Bi4Ti3O12, J AM CERAM, 81(12), 1998, pp. 3253-3259
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
81
Issue
12
Year of publication
1998
Pages
3253 - 3259
Database
ISI
SICI code
0002-7820(199812)81:12<3253:FTFOBL>2.0.ZU;2-0
Abstract
Ferroelectric thin films of bismuth-containing layered perovskite Bi4Ti3O12 have been fabricated by a metalorganic decomposition (MOD) method. Crack-f ree and crystalline films of similar to 5000 Angstrom thickness have been d eposited on Pt/Ti/SiO2/Si substrates, Different heat treatments have been s tudied to investigate the nucleation and growth of perovskite Bi4Ti3O12 cry stallites. If the same composition and final annealing temperature are used , films with different orientations are obtained by different heating sched ules. These films show a large anisotropy in ferroelectric properties. Theo retical considerations are presented to suggest that nucleation control is responsible for texture and grain-size evolution. Moreover, the origin of t he ferroelectric anisotropy is rooted in the two-dimensional nature of laye red polarization.