Diamond synthesis on silicon nitride by the hot filament chemical vapor deposition technique

Citation
R. Polini et al., Diamond synthesis on silicon nitride by the hot filament chemical vapor deposition technique, J CERAM S J, 106(12), 1998, pp. 1167-1171
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
ISSN journal
09145400 → ACNP
Volume
106
Issue
12
Year of publication
1998
Pages
1167 - 1171
Database
ISI
SICI code
0914-5400(199812)106:12<1167:DSOSNB>2.0.ZU;2-9
Abstract
Diamond films have been deposited by hot filament chemical vapor deposition on hot-pressed silicon nitride substrates using a mixture of hydrogen and methane with a CH4/H-2 volume ratio fixed to 0.5%. Scratching with diamond paste of the as-received substrates was necessary to obtain high nucleation densities (10(8)-10(9) cm(-2)) in the 750-1000 degrees C deposition temper ature range, while, on scratched substrates, the nucleation density decreas ed at 1050 degrees C, The diamond deposition rate has its maximum at around 850-900 degrees C. The film texture was {111} [100] at the low deposition temperatures, while became {111} {100} [110] at temperatures higher than 75 0 degrees C. A careful analysis of the Raman spectra allowed us to identify the best deposition conditions for the growth of high quality diamond. Sil icon nitride as a substrate for diamond CVD is better than cemented tungste n carbide due to the lower level of residual stress and to the higher phase purity of the coating.