THE EFFECT OF TRANSVERSE ELECTRIC-FIELD ON THE ELECTRON-OPTICAL-PHONON SCATTERING RATES IN QUANTUM WIRES

Within the dielectric continuum approach for the optical phonons, we h ave calculated the effect of transverse electric field on the intra-su bband electron-phonon scattering rates in a GaAs/AlAs rectangular quan tum wire in the presence of an external electric field. The results sh ow that the scattering rates of electron-confined LO phonon tend to de crease while the electric-field strength increases, but the scattering rates of electron-surface optical (SO) phonon tend to increase with t he electric-field strength. The changes of these scattering rates beco me significant for wide quantum well wire (QWW) and sufficiently high fields.