EFFECT OF ALLOY SCATTERING ON THE LOW-FIELD MICROWAVE MOBILITY IN N-HG0.8CD0.2TE IN THE EXTREME QUANTUM LIMIT

The effect of different scattering mechanisms on the low-field longitu dinal AC conductivity has been investigated in the extreme quantum lim it at low-temperatures in n-Hg0.8Cd0.2Te to examine the dominance of t he alloy scattering, if any, as seen in the low-held DC conductivity. The calculations have been made assuming a theoretical model which inc ludes the scattering of electrons by acoustic phonon via deformation p otential as well as via piezoelectric coupling, by ionized impurity an d by alloy disorder. Other complexities such as band nonparabolicity, nonequipartition of phonons and quantum screening have been included i n the model. It is seen that both the real and imaginary parts of the mobility due to acoustic phonon scattering decrease with increase in f requency, whereas both the parts of the mobility are almost constant o ver a wide range of frequency when ionized impurity or alloy disorder scattering is considered unlike in the low-field DC mobility where the alloy disorder scattering governs the transport. It is also seen that when band nonparabolicity is included in the theory, the mobility dec reases compared to that when parabolic band is considered, a trend whi ch is also seen for low-held DC mobility.