A study of deposition rate and characterization of BN thin films prepared by CVD

Triethylboron (TEB) and ammonia were employed as precursors in preparation of boron nitride thin films on Si(100) substrate by CVD. Operating paramete rs such as reactor pressure and feed rates of gases were varied to investig ate their effects on deposition rate and film characteristics. Total gas pr essure in the reactor was varied from near atmospheric to near 1 torr. Depo sition temperature was in the range of 850-1,100 degrees C. Deposition rate increased with increase of partial pressure of TEE, but decreased with inc rease of total pressure in the reactor. Deposited films were examined with SEM, FTIR, XPS, AES and XRD. Films were BN of turbostratic structure and th eir texture and carbon content varied with deposition conditions.