Vi. Kozlovsky et al., E-beam pumped blue-green VCSEL based on ZnCdSe/ZnSe MQW structure grown byMBE on ZnSe substrate, LASER PHYS, 8(6), 1998, pp. 1118-1123
ZnCdSe/ZnSe multiple quantum well structures (MQW) grown by molecular-beam
epitaxy (MBE) on a ZnSe substrate have been studied. A vertical-cavity surf
ace-emitting laser has been fabricated. The active medium consisted of the
MQW structure and part of the substrate. The lasing action under longitudin
al pump by a scanning electron beam with electron energy E-e from 40 to 70
keV has been obtained. The threshold current density was 60 A/cm(2) at T =
80 K and E-e = 65 keV. The output power was 0.15 W at lambda = 465 nm. The
efficiency of the electron excitation and threshold carrier density were es
timated. The cavity has exhibited lasing at T = 300 K only from ZnSe, owing
to the fact that the optical gain occurred in the substrate. Some approach
es to improve characteristics of lasers based on MQW structures grown on Zn
Se substrates are discussed.