Intense 1.5 mu m emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE

Authors
Nonogaki, Y Iguchi, T Fuchi, S Fujiwara, Y Takeda, Y
Citation
Y. Nonogaki et al., Intense 1.5 mu m emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE, MAT SCI E B, 57(1), 1998, pp. 84-86
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
57
Issue
1
Year of publication
1998
Pages
84 - 86
Database
ISI
SICI code
0921-5107(199812)57:1<84:I1MMEF>2.0.ZU;2-0
Abstract
We fabricated InAs quantum dots on exact and vicinal(001) InP surface by dr oplet hetero-epitaxy for the first time. Using the vicinal surface (2 degre es-off), InAs quantum dots with the average base diameter of 51 nm, the ave rage height of 8.1 nm, and the density of 2.2 x 10(10) cm(-2) were successf ully obtained. In room-temperature photoluminescence measurements, strong e mission originating from the quantum dots was observed at around 1.5 mu m i n both samples on the exactly and 2 degrees-off oriented (001) surfaces. On the vicinal surface, the peak position exhibited a blue shift and the FWHM of the peak was reduced, reflecting the decreased dot size and improved un iformity. (C) 1998 Elsevier Science S.A. All rights reserved.