Low field, room temperature magnetoresistance in (Lay-xMx)(y)MnO3-delta (M= Ca, Sr) thin-films deposited by liquid delivery CVD

Citation
D. Studebaker et al., Low field, room temperature magnetoresistance in (Lay-xMx)(y)MnO3-delta (M= Ca, Sr) thin-films deposited by liquid delivery CVD, MAT SCI E B, 56(2-3), 1998, pp. 168-172
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
56
Issue
2-3
Year of publication
1998
Pages
168 - 172
Database
ISI
SICI code
0921-5107(19981106)56:2-3<168:LFRTMI>2.0.ZU;2-S
Abstract
Liquid delivery, metal-organic chemical vapor deposition (MOCVD) was used t o deposit high quality, A-site deficient crystalline films of (Lay-xMx)(y)M nO3-delta (where M = Ca, Sr and y < 1). The properties of the deposited thi n-films are strongly dependent upon the film stoichiometry and display magn etoresistive responses at or above room temperature. Using Ca and Sr doped A-site deficient thin-films, we can shift the metal to insulator transition (Tc) in a controlled manner to temperatures that are useful for commercial applications. Further, these films exhibit useful magnetoresistance at roo m temperature in relatively small applied magnetic fields. (C) 1998 Elsevie r Science S.A. All rights reserved.