Scanning probe microscopy for the imaging and control of ferroelectric oxides

Citation
Ch. Ahn et al., Scanning probe microscopy for the imaging and control of ferroelectric oxides, MAT SCI E B, 56(2-3), 1998, pp. 173-177
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
56
Issue
2-3
Year of publication
1998
Pages
173 - 177
Database
ISI
SICI code
0921-5107(19981106)56:2-3<173:SPMFTI>2.0.ZU;2-X
Abstract
Using a combination of scanning probe techniques, including contact mode at omic force microscopy, electric force microscopy, piezoelectric microscopy, and scanning tunneling microscopy, the ferroelectric properties of ferroel ectric/metallic oxide heterostructures (Pb(Zr0.52Ti0.48)O-3/SrRuO3 and Sr(R u0.37Ti0.63)O-3/Pb(Zr0.2Ti0.8)O-3) and atomically smooth epitaxial ferroele ctric oxides (Pb(Zr0.2Ti0.8)O-3 and Pb(Zr0.52Ti0.48)O-3) have been studied. Ferroelectric domains in as-grown films were imaged with nanometer resolut ion, and the domain structure could be modified locally and reversibly. Usi ng the local polarization field of the ferroelectric, nonvolatile, reversib le held effects were induced in SrRuO3, at the submicron level, changing it s sheet resistance by up to 300 ohms per square in a fashion that does not require any permanent electrical contacts or associated lithographic proces sing. (C) 1998 Published by Elsevier Science S.A. All rights reserved.