We have grown epitaxial MgxZn1-xO alloy films and ZnO/MgxZn1-xO (x = 0.20)
superlattices on sapphire(0001) substrates by laser molecular beam epitaxy
and characterized their structures by X-ray diffraction. Single phase MgxZn
1-xO could be obtained up to x = 0.33, whereas MgO impurity phase with (111
) orientation segregated at x > 0.33. The bandgap of MgxZn1-xO was successf
ully controlled as verified by the photoluminescence peaks shifting 3.36 eV
(x = 0) to 3.87 eV (x = 0.33). It was found that the structure of the supe
rlattices was greatly improved by the use of a ZnO buffer layer on sapphire
substrate prior to the deposition of superlattice. Small angle X-ray diffr
action peaks corresponding to the period of the superlattices ranging from
8 to 18 nm could be clearly observed. (C) 1998 Elsevier Science S.A. All ri
ghts reserved.