Temperature dependence of AllnAs band gap energy and AllnAs/InP band offsets

The temperature variations of the AlInAs photoluminescence (PL) transition energies and the AlInAs/InP interface staggered lineup luminescence (SLL) e nergy are reported. The S shape appearing from 4 to 90 K on the energy v. t emperature curves of these PL energies are owing to extrinsic recombination s. In particular; the S shape of the SLL energy curve v. temperature is pro bably a result of acceptor impurities localised in AlInAs at the interface ton edge impurities). The band offsets were determined by solving the Schro dinger and Poisson equations with a self consistent calculation program. At 4.5 K, the conduction and valence band offsets are 0.384 and 0.295 eV resp ectively. Their temperature variation is shown to be important: 35 and 23 m eV at 4.5 and 300 K respectively. The Van Vechten and Malloy model (followi ng a thermodynamic approach) for the temperature variation of the band offs ets is compared to the results in the present work.