The CMS silicon tracker

Authors
D'Alessandro, R Albergo, S Angarano, M Azzi, P Babucci, E Bacchetta, N Bagliesi, G Bartalini, P Basti, A Biggeri, U Bilei, GM Bisello, D Boemi, D Bosi, F Borrello, L Bozzi, C Breuker, H Bruzzi, M Candelori, A Caner, A Castaldi, R Castro, A Catacchini, E Checcucci, B Ciampolini, P Civinini, C Connotte, J Creanza, D Da Rold, M de Palma, M Dell'Orso, R Della Marina, R Eklund, C Elliott-Peisert, A Feld, L Fiore, L Focardi, E French, M Freudenreich, K Giassi, A Giraldo, A Glessing, B Gu, WH Hall, G Hammerstrom, R Hrubec, J Huhtinen, M Karimaki, V Krammer, M Lariccia, P Lenzi, M Loreti, M Luebelsmeyer, K Lustermann, W Maggi, G Mannelli, M Mantovani, G Marchioro, A Martignon, G McEvoy, B Meschini, M Messineo, A My, S Paccagnella, A Palla, F Pandoulas, D Parrini, G Passeri, D Pieri, M Piperov, S Potenza, R Raffaelli, F Raso, G Raymond, M Santocchia, A Schmitt, B Selvaggi, G Servoli, L Sguazzoni, G Siedling, R Silvestris, L Skog, K Starodumov, A Stavitsky, I Stefanini, G Tempesta, P Tonelli, G Tricomi, A Tuuva, T Vannini, C Verdini, PG Viertel, G Xie, Z Wang, Y Watts, S Wittmer, B
Citation
R. D'Alessandro et al., The CMS silicon tracker, NUCL INST A, 419(2-3), 1998, pp. 538-543
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
419
Issue
2-3
Year of publication
1998
Pages
538 - 543
Database
ISI
SICI code
0168-9002(199812)419:2-3<538:TCST>2.0.ZU;2-C
Abstract
The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance . Because of the high radiation environment in which the detectors will ope rate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, reso lution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (C) 1998 Elsevier Science B.V. All rights reserved.