Studies of the near-surface layers of silicon crystals implanted with fastions

The near-surface layers of dislocation free silicon crystals implanted with 4 MeV/u oxygen and neon ions were investigated. The following methods: X-r ay diffraction and reflectometry, reflection high-energy electron diffracti on and Nomarski optical microscopy were used. The fine structural changes i nduced by irradiation were observed. For silicon crystal implanted with neo n ions the increase of the lattice parameter and a disturbance of crystal s tructure were detected, whereas for silicon crystal bombarded with oxygen i ons postimplantation defects on the surface were observed. For both cases t he increase in the surface roughness was shown. (C) 1998 Elsevier Science B .V. All rights reserved.