Poly(methyl phenyl silane), PMPSi, poly(biphenyl methyl silane), PBMSi, pol
y(c-hexyl methyl silane), PcHexMSi, and poly(methyl n-hexyl silane), PMnHex
Si, were irradiated in the absence of air with 300 MeV Kr-86(14+), 200 MeV
Xe-129(14+) and 120 MeV Ne-20(5+) ions. PMPSi was also irradiated with 65 M
eV N-15(5+) and 95 MeV Ar-40(5+) ions. In all cases, the ion beam irradiati
on induced insolubilization of the polysilanes indicating that intermolecul
ar crosslinking dominates over main-chain scission. By contrast, irradiatio
n with Co-60-gamma-rays (dE/dx = 0.02-0.03 ev/Angstrom) led to a decrease i
n the average molar mass indicating that main-chain scission is the dominat
ing effect when the polysilanes are subjected to radiation of low linear en
ergy transfer (LET, dE/dx). In the case of ion beam irradiation the dose to
gelation, D-gel, was determined by solubility tests. D-gel is inversely pr
oportional to G(X), the number of crosslinks per 100 eV absorbed by the pol
ymer. On this basis G(X) was estimated and it turned out that G(X) increase
s with increasing dE/dx, e.g. in the case of PMPSi G(X) increases from 0.02
4 to 0.42 by increasing dE/dr from 42 to 565 eV/Angstrom. (C) 1998 Elsevier
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