Single event burnout of high-power diodes

Authors
Maier, KH Denker, A Voss, P Becker, HW
Citation
Kh. Maier et al., Single event burnout of high-power diodes, NUCL INST B, 146(1-4), 1998, pp. 596-600
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
146
Issue
1-4
Year of publication
1998
Pages
596 - 600
Database
ISI
SICI code
0168-583X(199812)146:1-4<596:SEBOHD>2.0.ZU;2-X
Abstract
High-power diodes might be damaged by a single particle of cosmic radiation . This particle has first to produce a secondary nucleus, that ionizes more densely, through a nuclear reaction with the silicon of the diode. A multi plication of the number of charge carriers, primarily produced by this nucl eus, can occur and eventually lead to a break down. The onset of this charg e carrier multiplication is investigated with accelerated heavy ions under well controlled conditions. Clear trends are revealed, but the process is n ot yet understood. (C) 1998 Elsevier Science B.V. All rights reserved.