Two-dimensional calculations of anisotropic growth and coarsening are illus
trated. This model is intended to simulate the development of microstructur
e in materials like silicon nitride. The model is comprised of an ensemble
of polygonal particles with anisotropic surface energies and growth mobilit
ies. Particle growth is modeled by linear kinetics with a driving force pro
portional to a difference between local supersaturation and an equilibrium
chemical potential which depends on particle geometry and surface tension.
The competition for solute for particle growth is calculated via the diffus
ion equation, and conservation laws determine the strength of sources (or s
inks) in the diffusion equation. Statistics of particles size distributions
are obtained and regimes of kinetic behavior are related to transitions fr
om non-equilibrium to near-equilibrium kinetics. Computed microstructures a
re qualitatively comparable to those observed experimentally. (C) 1998 Else
vier Science B.V. All rights reserved.