Nitrogen-oxygen complexes in silicon

The characteristics of nitrogen-oxygen (N-O) complexes in nitrogen-doped Cz ochralski (NCz) silicon annealed at the temperature of 450 to 1150 degrees C up to 24 h have been studied by infrared transmission absorption spectros copy (FTIR) at room temperature and at low temperature (8 K). The relations of N-O complex absorption lines in the middle and in the far infrared rang e have been built up. Only during annealing at 550 degrees C, the two weak 1018 and 810 cm(-1) lines were found in FTIR spectra. It is considered that the five infrared absorption lines of N-O complexes have different thermal stability.