New complex defect in heavily doped GaAs : Zn grown by liquid phase epitaxy

Authors
Shamirzaev, TS Zhuravlev, KS Yakusheva, NA Petrenko, IP
Citation
Ts. Shamirzaev et al., New complex defect in heavily doped GaAs : Zn grown by liquid phase epitaxy, PHYS ST S-B, 210(2), 1998, pp. 317-320
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
210
Issue
2
Year of publication
1998
Pages
317 - 320
Database
ISI
SICI code
0370-1972(199812)210:2<317:NCDIHD>2.0.ZU;2-7
Abstract
The photoluminescence properties of heavily doped GaAs:Zn (100) layers grow n by liquid phase epitaxy from gallium and bismuth solutions at various tem peratures have been studied. It was shown that a line at 1.35 eV connected with the novel defect appears in photoluminescence spectra of the layers do ped at a level above 10(19) cm(-3). It has been found that the defect is a neutral complex consisting of native point defects of GaAs.