We report a complete far-infrared investigation of shallow level centres in
GaN. Transitions between the ground and excited states of shallow donors h
ave been observed by means of transmission and far-infrared photoconductivi
ty measurements - the latter for two configurations of the magnetic field r
elative to the crystal axis. The hitherto unobtainable high quality of the
spectra allows, for the first time, a comparison with a theoretical model o
f shallow donors in a crystal with a wurtzite structure.