Mobility passivating effect and thermal stability of hydrogen in silicon carbide

The diffusion and passivating effect of hydrogen (isotope H-2) in epitaxial p-type SiC is studied by secondary ion mass spectrometry and capacitance-v oltage profiling on Schottky diodes. The incorporation of hydrogen is achie ved by low-energy ion implantation. The influence of implantation energy, t emperature and subsequent annealing is presented. Annealing experiments wit h an electric field applied reveal a reactivation of passivated accepters a nd a H+ ion drift at a surprisingly low temperature of 530 K.