Comparison between the theoretical prediction of codoping and the recent experimental evidences in p-type GaN, AlN, ZnSe, CuInS2 and n-type diamond

We propose a new valence control method, the "codoping method (using both n - and p-type dopants at the same time)", for the fabrication of low-resisti vity p-type GaN, AlN, ZnSe, CuInS2, and n-type diamond based upon ab initio electronic structure calculations. Based upon the calculation, we proposed the following codoping method to fabricate low-resistivity semiconductors: 1. GaN: Si-Ga + 2Mg(Ga) (or Be-Ga), H + 2Mg(Ga) (or Be-Ga), and O-N + 2Mg( Ga) (or Be-Ga), 2. AlN: O-N + 2C(N), 3. ZnSe: In-Zn + 2N(Se), Cl-Se + 2N(Se ), Li-Zn + Cl-Se (or I-Se), and Te-Se + 2N(Se), 4. CuInS2: V-Cu + In-Cu + 2 P, and 5. diamond: B + 2N, and H + 2P. We compare our prediction with the r ecent successful codoping experiments to fabricate the low-resistivity p- a nd n-type wide band-gap semiconductors.