M. Suezawa et R. Mori, Optical absorption study of the interaction between group II acceptors andhydrogen in Si, PHYS ST S-B, 210(2), 1998, pp. 507-511
The interaction between hydrogen (H) and Zn was studied from the measuremen
ts of optical absorption spectra of H and Zn-doped Si crystals. FZ Si cryst
als were doped with Zn by annealing the crystals in Zn vapor at 1200 degree
s C followed by quenching. After Zn-doping, the specimens were doped with H
and/or deuterium (D) by annealing them in a H and/or D ambient followed by
quenching. Optical absorption spectra of the above specimens were measured
at about 6 K with an FT-IR spectrometer. Hydrogen atoms are known to passi
vate Zn accepters partially since the optical absorption intensity associat
ed with electronic transitions becomes much weaker after hydrogenation. Ins
tead, other absorption peaks appear at around 2130 cm(-1). From the compari
son of separations of those peaks, they are identified to be due to electro
nic transitions associated with Zn-H accepters. Optical absorption peaks as
sociated with Zn-D accepters have higher energies by about 12.1 cm(-1) than
those of Zn-H accepters.