Optical absorption study of the interaction between group II acceptors andhydrogen in Si

Citation
M. Suezawa et R. Mori, Optical absorption study of the interaction between group II acceptors andhydrogen in Si, PHYS ST S-B, 210(2), 1998, pp. 507-511
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
210
Issue
2
Year of publication
1998
Pages
507 - 511
Database
ISI
SICI code
0370-1972(199812)210:2<507:OASOTI>2.0.ZU;2-R
Abstract
The interaction between hydrogen (H) and Zn was studied from the measuremen ts of optical absorption spectra of H and Zn-doped Si crystals. FZ Si cryst als were doped with Zn by annealing the crystals in Zn vapor at 1200 degree s C followed by quenching. After Zn-doping, the specimens were doped with H and/or deuterium (D) by annealing them in a H and/or D ambient followed by quenching. Optical absorption spectra of the above specimens were measured at about 6 K with an FT-IR spectrometer. Hydrogen atoms are known to passi vate Zn accepters partially since the optical absorption intensity associat ed with electronic transitions becomes much weaker after hydrogenation. Ins tead, other absorption peaks appear at around 2130 cm(-1). From the compari son of separations of those peaks, they are identified to be due to electro nic transitions associated with Zn-H accepters. Optical absorption peaks as sociated with Zn-D accepters have higher energies by about 12.1 cm(-1) than those of Zn-H accepters.