Annihilation studies of oxygen-related new donors in Cz-Si

The annihilation kinetics of new oxygen donors (NDs) has been studied. The ND and interstitial oxygen concentration as well as the energy distribution of ND states are determined subsequent to annealing steps with various dur ation (2 s to 250 h) and at temperatures ranging from 875 to 1025 degrees C . The annihilation occurs in two steps: At the temperatures used, energetic ally shallow ND states (E-C - E less than or equal to 0.1 eV) annihilate wi thin 15 min, while the deeper ND states require annealing times up to 250 h . The thermal activation energy Delta E-A for the annihilation of shallow N D states is determined to be equal to (3.03 +/- 0.20) eV.