Lattice defects in undoped CdAs2 monocrystals

Citation
Sf. Marenkin et al., Lattice defects in undoped CdAs2 monocrystals, PHYS ST S-B, 210(2), 1998, pp. 569-573
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
210
Issue
2
Year of publication
1998
Pages
569 - 573
Database
ISI
SICI code
0370-1972(199812)210:2<569:LDIUCM>2.0.ZU;2-Z
Abstract
The spectra of optical absorption and photoconductivity of perfect CdAs2 si ngle crystals were investigated near the intrinsic edge and in the extrinsi c absorption region. The existence of three donor levels created by structu ral defects is established. The mechanism of defect formation is suggested: the interstitial Cd-i atom in different charge states created the epsilon( 1) < 0.02 eV and epsilon(3) congruent to 0.42 eV levels, the As-v vacancies created the epsilon(2) congruent to 0.26 eV level.