The spectra of optical absorption and photoconductivity of perfect CdAs2 si
ngle crystals were investigated near the intrinsic edge and in the extrinsi
c absorption region. The existence of three donor levels created by structu
ral defects is established. The mechanism of defect formation is suggested:
the interstitial Cd-i atom in different charge states created the epsilon(
1) < 0.02 eV and epsilon(3) congruent to 0.42 eV levels, the As-v vacancies
created the epsilon(2) congruent to 0.26 eV level.