Optical absorption spectra of hydrogen (H)-doped Si crystals were studied t
o clarify the hydrogen-related optical absorption peaks. Hydrogen was doped
in Si crystals by annealing them in a hydrogen atmosphere at 1200 degrees
C followed by quenching. Some specimens were irradiated with high energy el
ectrons (3 MeV) or neutrons. Some specimens were treated with atomic hydrog
en. Their optical absorption spectra were measured at about 7 K with an FT-
IR spectrometer. In accordance with Pritchard et al. an absorption peak was
observed at 3618 cm(-1) in H-doped specimens. Its intensity became weaker
after electron or neutron irradiation. Instead, many absorption peaks appea
red around 2000 cm(-1) and an absorption peak appeared at 3942 cm(-1). The
responsible defect for the latter peak does not include H. Many absorption
peaks around 2000 cm(-1) were compared with those observed in proton-implan
ted Si.