Effects of in-plane magnetic fields on the acceptor-related photoluminescence spectra of p-doped coupled-well superlattices

We present a theoretical study of impurity-related photoluminescence of acc eptor-doped GaAs-(Ga,Al)As superlattices under in-plane magnetic fields wit hin the effective-mass approximation. An expansion in terms of sine functio ns is used in order to obtain electron and hole magnetic Landau levels wher eas products of sine and hydrogenic-like variational functions are taken fo r the shallow-acceptor envelope wave functions. The magnetoluminescence lin eshapes associated to transitions from the lowest Landau conduction subband to impurity states are calculated for an homogeneous distribution of accep ters throughout the semiconducting superlattice. We found quite good agreem ent between the theoretical acceptor-related magnetoluminescence peak posit ions for GaAs-(Ga,Al)As superlattices and available experimental data.