Shallow acceptor states in SiGe quantum wells

Authors
Kagan, MS Altukhov, IV Korolev, KA Orlov, DV Sinis, VP Schmalz, K Thomas, SG Wang, KL Yassievich, IN
Citation
Ms. Kagan et al., Shallow acceptor states in SiGe quantum wells, PHYS ST S-B, 210(2), 1998, pp. 667-670
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
210
Issue
2
Year of publication
1998
Pages
667 - 670
Database
ISI
SICI code
0370-1972(199812)210:2<667:SASISQ>2.0.ZU;2-#
Abstract
The temperature dependences of conductivity and hole mobility in boron dope d SiGe quantum well structures were studied. The conductivity at low temper atures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage excitation including thermal activati on of holes from the ground to strain-split B states following by hole tunn eling into the valence band.