The effects of quantum confinement and magnetic fields on the binding energy of hydrogenic impurities in low-dimensional systems

Using a variational procedure within the effective-mass approximation we ca lculated the binding energy of a shallow hydrogenic impurity on-center loca ted in cylindrical shape GaAS-(Ga,Al)As low-dimensional systems, such as: q uantum-well, quantum-well wires, and quantum dots, considering an infinite confining potential in all surfaces of the structures. The binding energy o f the ground state is calculated as function of length, radius of the struc ture, and intensity of a magnetic field applied in axial direction. We show that the binding energy of the impurity decreases with both the length and radius of the structure, whereas it increases with the applied magnetic fi eld. Finally, we show that our results are in good agreement with those obt ained in previous calculations in GaAs-(Ga,Al)As quantum wells, quantum-wel l wires and quantum dots of comparable dimensions. We consider future under standing of optical phenomena related with donor impurities in GaAs-(Ga,Al) As low-dimensional systems in which the effects of applied magnetic fields compete with the quantum confinement, must take into account these results.