The in-situ cleaved n-InAs(110) surface is studied by low temperature scann
ing tunneling spectroscopy and microscopy in magnetic fields up to 6 T perp
endicular to the surface. The dI/dV(V) curves exhibit characteristic oscill
ations in magnetic field, which are attributed to Landau levels in the cond
uction band. The energy dependence of the effective electron mass is determ
ined. Dopants reduce the Landau level energy. As expected, the energy reduc
tion decreases with increasing Landau level number.