Landau level quantization measured by scanning tunneling spectroscopy on n-InAs(110)

Citation
M. Morgenstern et al., Landau level quantization measured by scanning tunneling spectroscopy on n-InAs(110), PHYS ST S-B, 210(2), 1998, pp. 845-851
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
210
Issue
2
Year of publication
1998
Pages
845 - 851
Database
ISI
SICI code
0370-1972(199812)210:2<845:LLQMBS>2.0.ZU;2-H
Abstract
The in-situ cleaved n-InAs(110) surface is studied by low temperature scann ing tunneling spectroscopy and microscopy in magnetic fields up to 6 T perp endicular to the surface. The dI/dV(V) curves exhibit characteristic oscill ations in magnetic field, which are attributed to Landau levels in the cond uction band. The energy dependence of the effective electron mass is determ ined. Dopants reduce the Landau level energy. As expected, the energy reduc tion decreases with increasing Landau level number.