Resonant states in strained semiconductors

Authors
Odnoblyudov, MA Chistyakov, VM Yassievich, IN Kagan, MS
Citation
Ma. Odnoblyudov et al., Resonant states in strained semiconductors, PHYS ST S-B, 210(2), 1998, pp. 873-877
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
210
Issue
2
Year of publication
1998
Pages
873 - 877
Database
ISI
SICI code
0370-1972(199812)210:2<873:RSISS>2.0.ZU;2-J
Abstract
A theoretical consideration of resonant states in strained semiconductors i s presented. Energy position, lifetime and wave functions of resonant state s have been obtained for two approaches: (i) zero radius potential model an d (ii) Dirac's approach for the consideration of Coulomb potential of accep tor impurities. The energy dependence of optical transitions between resona nt and local states is studied. Numerical calculations are produced for uni axially stressed Ge:Ga.