Mobility edge in nondegenerate semiconductor with random potential of charged impurities

Authors
Kagan, MS Landsberg, EG Zhdanova, NG Altukhov, IV
Citation
Ms. Kagan et al., Mobility edge in nondegenerate semiconductor with random potential of charged impurities, PHYS ST S-B, 210(2), 1998, pp. 891-895
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
210
Issue
2
Year of publication
1998
Pages
891 - 895
Database
ISI
SICI code
0370-1972(199812)210:2<891:MEINSW>2.0.ZU;2-2
Abstract
The low-temperature mobility saturation found in a nondegenerate 3D electro n gas at strong charged-impurity scattering was shown to be due to the exis tence of a quantum mobility edge. The negative magnetoresistance caused by magnetic field suppression of interference corrections to the conductivity was observed. The interference corrections were found to be small near the mobility edge.