Experimental and theoretical results for the dissociative adsorption of H-2
On vicinal Si(001) surfaces are presented. Using optical second-harmonic g
eneration, sticking probabilities at the step sites are found to exceed tho
se on the terraces by up to 6 orders of magnitude. Density functional theor
y calculations indicate the presence of direct adsorption pathways for mono
hydride formation but with a dramatically lowered barrier for step adsorpti
on due to an efficient rehybridization of dangling orbitals.