Highly site-specific H-2 adsorption on vicinal Si(001) surfaces

Citation
P. Kratzer et al., Highly site-specific H-2 adsorption on vicinal Si(001) surfaces, PHYS REV L, 81(25), 1998, pp. 5596-5599
Citations number
25
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
81
Issue
25
Year of publication
1998
Pages
5596 - 5599
Database
ISI
SICI code
0031-9007(199812)81:25<5596:HSHAOV>2.0.ZU;2-2
Abstract
Experimental and theoretical results for the dissociative adsorption of H-2 On vicinal Si(001) surfaces are presented. Using optical second-harmonic g eneration, sticking probabilities at the step sites are found to exceed tho se on the terraces by up to 6 orders of magnitude. Density functional theor y calculations indicate the presence of direct adsorption pathways for mono hydride formation but with a dramatically lowered barrier for step adsorpti on due to an efficient rehybridization of dangling orbitals.