Activated Si-H exchange at Si-island edges on Si(001)

Authors
Smilauer, P Mizushima, K Vvedensky, DD
Citation
P. Smilauer et al., Activated Si-H exchange at Si-island edges on Si(001), PHYS REV L, 81(25), 1998, pp. 5600-5603
Citations number
26
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
81
Issue
25
Year of publication
1998
Pages
5600 - 5603
Database
ISI
SICI code
0031-9007(199812)81:25<5600:ASEASE>2.0.ZU;2-H
Abstract
The changes in the growth kinetics of Si islands during homoepitaxy on Si(0 01) caused by predosing the surface with different amounts of hydrogen are studied with kinetic Monte Carlo simulations and mean-field rate equations. Thermally activated exchange between H and Si at the S-B edges of Si islan ds is identified as the key process responsible for the experimentally obse rved temperature and hydrogen dosage dependences of the Si-island density a nd morphology.