C. Wittneven et al., Scattering states of ionized dopants probed by low temperature scanning tunneling spectroscopy, PHYS REV L, 81(25), 1998, pp. 5616-5619
N type InAs(110) is investigated by scanning tunneling spectroscopy at low
temperature. dI/dV images at positive sample bias exhibit circular corrugat
ions, which are caused by the scattering of electron waves at the attractiv
e potential of ionized dopants. Normalizing the images by simultaneously re
corded constant current images gives quasidirect access to the surface dist
ribution of the corresponding energy selected scattering states. The normal
ized images are in quantitative agreement with a WKB model. The energy depe
ndence of the scattering cross section can be estimated from the model.