Scattering states of ionized dopants probed by low temperature scanning tunneling spectroscopy

Citation
C. Wittneven et al., Scattering states of ionized dopants probed by low temperature scanning tunneling spectroscopy, PHYS REV L, 81(25), 1998, pp. 5616-5619
Citations number
31
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
81
Issue
25
Year of publication
1998
Pages
5616 - 5619
Database
ISI
SICI code
0031-9007(199812)81:25<5616:SSOIDP>2.0.ZU;2-C
Abstract
N type InAs(110) is investigated by scanning tunneling spectroscopy at low temperature. dI/dV images at positive sample bias exhibit circular corrugat ions, which are caused by the scattering of electron waves at the attractiv e potential of ionized dopants. Normalizing the images by simultaneously re corded constant current images gives quasidirect access to the surface dist ribution of the corresponding energy selected scattering states. The normal ized images are in quantitative agreement with a WKB model. The energy depe ndence of the scattering cross section can be estimated from the model.