Electrically induced room temperature metastability in semi-insulating GaAs

Authors
Fung, S Luo, YL Beling, CD Chen, TP
Citation
S. Fung et al., Electrically induced room temperature metastability in semi-insulating GaAs, SOL ST COMM, 108(12), 1998, pp. 907-911
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
108
Issue
12
Year of publication
1998
Pages
907 - 911
Database
ISI
SICI code
0038-1098(1998)108:12<907:EIRTMI>2.0.ZU;2-1
Abstract
An electrically induced metastable state of the Al/SI-GaAs/Al back-to-back system is reported for the first time. The state is measured by placing the system under reverse bias breakdown conditions and its transient decay obs erved through conductivity measurements at room temperature. Similar, but n ot identical metastabilities were also found on Ti/SI-GaAs/Ti and Au/SI-GaA s/Au systems. The objective of this paper is to report on these findings. ( C) 1998 Elsevier Science Ltd. All rights reserved.