Transport properties of iron nitride films prepared by ion beam assisted deposition

Measurement of electrical resistivity in the temperature range 77 K less th an or equal to T less than or equal to 300 K and the magnetic hysteresis lo ops at room temperature of iron nitride films prepared by ion beam assisted deposition have been carried out. Different phases present in the films ar e identified by using X-ray diffraction. Though saturation magnetization is very low for the Fe2N films, the other phases of iron nitride such as Fe2. 5N, Fe4N and Fe3N etc. show saturation magnetization varying from 3.35 x 10 (-2) e.m.u. to 12.3 x 10(-2) e.m.u. The coercivity of the films varies with thickness and obeys the d(-4/3) law which may correspond to the formation of Bloch wall. The resistivity of all the films obey the T-2 variation in t he temperature range 77 K less than or equal to T less than or equal to 300 K. This may be due to electron-spin wave scattering. (C) 1998 Elsevier Sci ence Ltd. All rights reserved.