Hole subband non-parabolicities in strained Si/Si1-xGex quantum wells

Citation
G. Hionis et Gp. Triberis, Hole subband non-parabolicities in strained Si/Si1-xGex quantum wells, SUPERLATT M, 24(6), 1998, pp. 399-407
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
24
Issue
6
Year of publication
1998
Pages
399 - 407
Database
ISI
SICI code
0749-6036(1998)24:6<399:HSNISS>2.0.ZU;2-I
Abstract
We study the hole subband non-parabolicities in undoped pseudomorphic Si/Si 1-xGex quantum wells, strained in the growth direction [100]. We solve exac tly the multiband effective mass equation that describes the heavy, light a nd split-off hole valence bands. The symmetries of the Luttinger-Kohn Hamil tonian of the system are used to decouple the degenerate subbands. We calcu late the in-plane dispersion relations, investigate the importance of the i nclusion of the split-off hole valence band in the Hamiltonian and comment on the resulted non-parabolicities. Resonance states are also obtained. (C) 1998 Academic Press.