We present a calculation of the spin-relaxation time of photoexcited electr
ons in p-doped quantum wells of GaAs with the spin-flip mechanism due to th
e electron-hole exchange interaction. We have observed shorter spin-relaxat
ion times for electrons close to the conduction-band edge when including th
e spin mixing of the valence-hole states. This spin mixing allows exchange
spin-relaxation channels which are energy forbidden in the case of pure-spi
n holes. (C) 1998 Academic Press.