Spin relaxation of electrons excited in p-doped semiconductor heterostructures

Authors
Maialle, MZ Degani, MH
Citation
Mz. Maialle et Mh. Degani, Spin relaxation of electrons excited in p-doped semiconductor heterostructures, SUPERLATT M, 24(6), 1998, pp. 459-463
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
24
Issue
6
Year of publication
1998
Pages
459 - 463
Database
ISI
SICI code
0749-6036(1998)24:6<459:SROEEI>2.0.ZU;2-2
Abstract
We present a calculation of the spin-relaxation time of photoexcited electr ons in p-doped quantum wells of GaAs with the spin-flip mechanism due to th e electron-hole exchange interaction. We have observed shorter spin-relaxat ion times for electrons close to the conduction-band edge when including th e spin mixing of the valence-hole states. This spin mixing allows exchange spin-relaxation channels which are energy forbidden in the case of pure-spi n holes. (C) 1998 Academic Press.