Conductivity and photoelectric response of electrodeposited thallic oxide films

Citation
Jf. Liu et al., Conductivity and photoelectric response of electrodeposited thallic oxide films, SUPRAMOL SC, 5(5-6), 1998, pp. 541-543
Citations number
14
Categorie Soggetti
Multidisciplinary
Journal title
SUPRAMOLECULAR SCIENCE
ISSN journal
09685677 → ACNP
Volume
5
Issue
5-6
Year of publication
1998
Pages
541 - 543
Database
ISI
SICI code
0968-5677(199810/12)5:5-6<541:CAPROE>2.0.ZU;2-K
Abstract
Highly conductive polycrystalline and amorphous Tl2O3 films are prepared by electrodeposition method. The resistivity of the polycrystalline film is l ower than that of the amorphous one. A resisitivity of only 3.2 x 10(-4) Om ega cm was obtained for the polycrystalline film. It is found that the elec trodeposited Tl2O3 films exhibit photoelectric response of n-type semicondu ctors. This photoelectric response may find use for further application of the Tl2O3 films. (C) 1998 Elsevier Science Limited. All rights reserved.