Highly conductive polycrystalline and amorphous Tl2O3 films are prepared by
electrodeposition method. The resistivity of the polycrystalline film is l
ower than that of the amorphous one. A resisitivity of only 3.2 x 10(-4) Om
ega cm was obtained for the polycrystalline film. It is found that the elec
trodeposited Tl2O3 films exhibit photoelectric response of n-type semicondu
ctors. This photoelectric response may find use for further application of
the Tl2O3 films. (C) 1998 Elsevier Science Limited. All rights reserved.