Surface vacancy diffusion on Cu(111): a computer simulation study

Citation
Ag. Mikhin et N. De Diego, Surface vacancy diffusion on Cu(111): a computer simulation study, SURF SCI, 418(1), 1998, pp. 166-170
Citations number
15
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
418
Issue
1
Year of publication
1998
Pages
166 - 170
Database
ISI
SICI code
0039-6028(19981127)418:1<166:SVDOCA>2.0.ZU;2-Y
Abstract
The diffusion of a surface vacancy on Cu(111) has been studied by means of molecular dynamics in conjunction with the many-body potential derived from the second-moment approximation of the tight-binding model. The calculatio ns performed in the high-temperature range reveal that the surface vacancy diffusion occurs mainly via the random nearest-neighbour hops with the acti vation energy close to the static migration barrier. Small contributions of the third-neighbour surface-layer jumps and jumps between the first and th e second layer are also recorded. The latter jumps are likely to be possibl e due to some dynamical co-operative effect among neighbouring atoms around a vacancy that effectively reduces the inter-layer migration barrier. (C) 1998 Elsevier Science B.V. All rights reserved.