The adsorption of potassium on MgO thin films supported on Ru(001) has been
studied using TDS and XPS. The interaction of K atoms with defect sites in
MgO films at low K coverages is evidenced by K desorption at a constant te
mperature of 335 K and a K 2p(3/2) binding energy (BE) of 293.5 eV within t
heta(K)less than or equal to 1 ML. Upon oxygen adsorption on K submonolayer
-covered MgO, a molecular oxygen species desorbing at 390 K is characterize
d with an O 1s BE of 533.7 eV, demonstrated further in isotope exchange exp
eriments. This molecular oxygen species gradually diminishes with increasin
g theta(K). The formation of K2O at theta(K)greater than or equal to 1 ML i
s demonstrated by the O 1s peak at 528.0 eV, together with its thermal deso
rption at 600 K. A strongly bonded K=O complex evidenced by coincident K an
d O-2 desorption at 800-1000 K exists at all theta(K)s studied. (C) 1998 El
sevier Science B.V. All rights reserved.